Ultra-thin TaN Damascene Nanowire Structures on 300 mm Si Wafers for Quantum Applications

We report on the development and characterization of superconducting damascene tantalum nitride (TaN) nanowires, 100 nm to 3 μm wide, with TaN thicknesses varying from 5 35 nm, using 193 optical lithography chemical mechanical planarization among other 300 mm wafer-scale processes. The film composition chosen for nanowire fabrication was informed by a detailed study unpatterned films nitrogen ratios, formed reactive sputtering. also discuss influence encapsulation copper disordered atomic layer deposited critical current nanowires. Superconducting density (measured at 12 mK) ranges 0.12 MA/cm2 0.85 depending width thickness. potential ultra-thin nanowires scale is discussed in context applications such as on-chip integration readout qubits, single photon detection quantum computing, well large detecting focal plane arrays cosmology broader range wavelengths.